nductor patterned bridge defects using the finite-difference time-domain (FDTD) method NIST -- National Institute of Standards and Technology, data.nist.gov (Standard Reference / public data, DCAT/NERDm). {"@context":["https://data.nist.gov/od/dm/nerdm-pub-context.jsonld",{"@base":"ark:/88434/mds115xkfz"}],"_schema":"https://data.nist.gov/od/dm/nerdm-schema/v0.7#","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/pub/v0.7#/definitions/PublicDataResource"],"@type":["nrdp:PublicDataResource"],"@id":"ark:/88434/mds115xkfz","doi":"doi:10.18434/T4/1500937","title":"Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method","contactPoint":{"fn":"Bryan Barnes","hasEmail":"mailto:bryan.barnes@nist.gov"},"modified":"2018-04-20","ediid":"6A4A339C5C091C09E053245706817F211916","landingPage":"https://data.nist.gov/od/id/6A4A339C5C091C09E053245706817F211916","description":["An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry. Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry. Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results. Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files."],"keyword":["finite-difference time-domain","FDTD","electromagnetic simulation","pattered defect inspection","defects","simulation input"],"theme":["Metrology:Dimensional metrology","Manufacturing:Process measurement and control","Nanotechnology:Nanoelectronics"],"topic":[{"scheme":"https://data.nist.gov/od/dm/nist-themes-chipsmetrology/v1.0","tag":"Metrology: Computational Technique: Simulation","@type":"Concept"},{"scheme":"https://data.nist.gov/od/dm/nist-themes-chipsmetrology/v1.0","tag":"Microelectronics: Electronic 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