← Back to results

NIST Electron Effective Attenuation Length Database - SR

D 82 NIST -- National Institute of Standards and Technology, data.nist.gov (Standard Reference / public data, DCAT/NERDm). {"@context":["https://data.nist.gov/od/dm/nerdm-pub-context.jsonld",{"@base":"ark:/88434/mds01709p3"}],"_schema":"https://data.nist.gov/od/dm/nerdm-schema/v0.7#","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/pub/v0.7#/definitions/PublicDataResource"],"@type":["nrd:SRD","nrdp:PublicDataResource","dcat:Dataset"],"@id":"ark:/88434/mds01709p3","title":"NIST Electron Effective Attenuation Length Database - SRD 82","contactPoint":{"hasEmail":"mailto:cedric.powell@nist.gov","@type":"vcard:Contact","fn":"Cedric Powell"},"modified":"2011-01-01","status":"available","ediid":"ECBCC1C130092ED9E04306570681B10715","landingPage":"https://www.nist.gov/srd/nist-standard-reference-database-82","description":["The NIST Electron Effective Attenuation Length Database provides values of electron effective attenuation lengths (EALs) in materials at user-selected electron energies between 50 eV and 2,000 eV. The database was designed mainly to provide EALs (to account for effects of elastic-electron scattering) for measurements of the thicknesses of overlayer films and, to a much lesser extent, for measurements of the depths of thin marker layers. EALs are calculated using an algorithm based on electron transport theory for measurement conditions specified by the user. A critical review on the EAL has been published [A. Jablonski and C. J. Powell, Surf. Science Reports 47, 33 (2002)], and simple practical expressions for the EAL, mean escape depth, and information depth are given in another paper by the same authors [J. Vac. Sci. Technol. A 27, 253 (2009)]."],"keyword":["Auger electron spectroscopy","ESCA","XPS","depth distribution function","effective attenuation length","electron spectroscopy for chemical analysis","material database","photoelectron","photoelectron spectroscopy","photoemission","surface analysis","x-ray photoelectron spectroscopy"],"theme":["Standards: Reference data"],"topic":[{"@type":"Concept","scheme":"https://data.nist.gov/od/dm/nist-themes/v1.1","tag":"Standards: Reference data"}],"references":[{"@type":["deo:BibliographicReference"],"@id":"#ref:sites/default/files/documents/srd/SRD82UsersGuideV1-3.pdf","refType":"IsSupplementTo","location":"https://www.nist.gov/sites/default/files/documents/srd/SRD82UsersGuideV1-3.pdf","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/bib/v0.7#/definitions/DCiteReference"]},{"@type":["deo:BibliographicReference"],"@id":"#ref:10.1116/1.3071947","refType":"IsSupplementTo","location":"https://dx.doi.org/10.1116/1.3071947","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/bib/v0.7#/definitions/DCiteReference"]}],"accessLevel":"public","license":"https://www.nist.gov/open/license","inventory":[{"forCollection":"","childCount":2,"descCount":2,"byType":[{"forType":"dcat:Distribution","childCount":2,"descCount":2},{"forType":"nrdp:AccessPage","childCount":2,"descCount":2}],"childCollections":[]}],"components":[{"accessURL":"https://dx.doi.org/10.18434/T4MK5P","mediaType":"text/html","title":"Home page of website","@type":["nrdp:AccessPage","dcat:Distribution"],"@id":"#10.18434/T4MK5P","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/pub/v0.7#/definitions/AccessPage"]},{"accessURL":"https://www-s.nist.gov/srd_online/index.cfm?fuseaction=home.main&productID=SRD82v1.3","description":"This database is free, but requires that a form be filled out in order to be able to download.","title":"Form to download the database","@type":["nrdp:AccessPage","dcat:Distribution"],"@id":"#/www-s.nist.gov/srd_online/index.cfm?fuseaction=home.main&productID=SRD82v1.3","_extensionSchemas":["https://data.nist.gov/od/dm/nerdm-schema/pub/v0.7#/definitions/AccessPage"]}],"publisher":{"@type":"org:Organization","name":"National Institute of Standards and Technology"},"language":["en"],"bureauCode":["006:55"],"programCode":["006:052"],"version":"1.0.0"},