06-09) Run: 106 agents, 5 angles, 24 sources fetched, 118 claims extracted, 25 adversarially verified (3-vote), 20 confirmed, 5 KILLED. Only confirmed claims below. Killed claims listed at the end — DO NOT REUSE THEM. == CONFIRMED (vote, sources) == C1 [3-0] Fully-printed replacement of silicon ICs is NOT feasible today. Printed metrics (mobility, contact R, channel length, density, switching freq) are orders of magnitude below Si CMOS: ~0.006 tr/mm2 (inkjet organic) to ~0.6 tr/mm2 (3D organic stacks). Wet printing resolves tens of microns. Printed metal-oxide TFTs reach ~20 cm2/V·s (champion device, 300-500C anneal; typical 1-10). Adv. Mater. 2025 (Dahiya) 10.1002/adma.202411151; PMC11899526; arXiv 2505.00011 C2 [3-0] The demonstrated high-performance architecture is FLEXIBLE HYBRID ELECTRONICS: conventionally-fabbed silicon dies (incl. thinned ultra-thin chips transfer-printed onto flex) + printed interconnects/sensors/passives + EHD/DIW-printed vias. "Print the wiring, buy or self-fab the silicon." IDTechEx 2025: print-everything "has largely been supplanted by FHE". PMC7547062; 10.1002/admt.202400130 C3 [3-0] Micron-scale conductor printing demonstrated WITHOUT cleanroom litho: subfemtoliter inkjet (0.7 fL Ag-NP droplets) -> continuous 2-um silver lines, sintered 130C (plastic-safe); 1-um-channel OTFTs with printed S/D contacts (pentacene 0.3 cm2/V·s, on/off 1e6). 2-um is the reliable floor; head is exotic. Sekitani PNAS 105:4976 (2008), PMC2278200 C4 [3-0] Printed passives are power-circuit-grade: screen-printed Ag-microflake inductors on 76-um PET reach 4.72/7.84 uH, Q~33-35 @ 11-16 MHz, SRF 24-36 MHz, PROVEN in a working boost converter driving OLEDs (4.9-ohm ESR -> low-power only). Screen printing = the most home-reproducible technique in the corpus. Ostfeld, Sci Rep 5:15959 (2015) C5 [3-0] Small-team silicon floor = the 5-10 MICRON node via DIY photolithography: (a) Zeloof Z2 (garage, Aug 2021): 100-transistor NMOS, 10-um polysilicon gate, Intel-4004-class (yield 1 good die of 12). (b) CMU Hacker Fab: self-aligned NMOS 10-um (5-um by Mar 2026), 952 tr/chip, 94% yield, Vt 1.26V; >1500 NMOSFETs by 8 students. (c) ~10 students: empty room -> working transistor fab in ~4 months (spring 2023). sam.zeloof.xyz; hackerfab.ece.cmu.edu; docs.hackerfab.org C6 [2-1, medium] Hacker Fab's open tool stack: maskless litho stepper from projector parts (arXiv 2510.15082 + github.com/hacker-fab/stepper), RF sputtering chamber from ham-radio gear, Arduino-run ALD; open BOMs/SOPs; ~7 facilities across 6+ universities (Mar 2026). CAVEAT: university lab w/ funding, output = micron-scale discrete transistors, NOT full ICs; "minimum viable" framing is interpretive. C7 [3-0] LumenPnP pick-and-place is FULLY open source (CERN-OHL-W v2 hw, MPL 2.0 sw, STLs+schematics+feeders on github.com/opulo-inc/lumenpnp): $1,995 machine, bundles $2,450-$7,245 (live prices 2026-06-09). Its PLACEMENT SPECS (0402/0.4mm pitch/1580cph) were REFUTED 0-3 = unverified marketing; measure before trusting. C8 [3-0] Gershenfeld/fab-lab floor (2012, largely intact): MIT CBA kit ~$50k equipment + ~$20k materials (laser cutter, 3D printer, CNC mills, electronics components); RepRap-lineage printers hundreds-to-thousands of dollars; even the most self-replicating machines could NOT make their own CHIPS or STEPPER MOTORS (bought commodities) — still true today (2025 near-fully-printed printer used a printed BRUSHED motor, still no chips). Chip side now partially raised by Zeloof/Hacker Fab. cba.mit.edu/docs/papers/12.09.FA.pdf == KILLED IN VERIFICATION — DO NOT REUSE == K1 [0-3] "Fully printed transistors limited to few-micron channels" (as phrased) K2 [1-2] Screen-printed BaTiO3 capacitor density 0.33-0.53 nF/cm2 (failed quote-verify) K3 [1-2] Hybrid printed+IC boost converter ">85% relative efficiency" (failed quote-verify) K4 [0-3] Pentacene/F16CuPc mobility figures as "the printed floor" (as phrased) K5 [0-3] LumenPnP production placement specs (0402, 0.4mm, 0.5mm BGA, 1580 cph) == COVERAGE GAPS (silent, not negative — RAISED HANDS) == G1 Repair workflows (board scan/copy, trace repair, Gerber recovery): NO surviving claims. G2 Commercial AME platforms (Voltera/Nano Dimension/BotFactory/aerosol jet): none survived. G3 Printed antennas/sensors: not covered by surviving claims. == OPEN QUESTIONS == O1 Verified printed-circuit (not chip-fab) home stack: measured trace resistivity, via reliability, multilayer yield (Voltera V-One/NOVA, BotFactory SV2, open-source). O2 Demonstrated 3D-print+reverse-engineering repair workflows w/ measured success rates. O3 Independent measurement of LumenPnP placement capability. O4 Full sovereign (non-university) Hacker Fab replication: total BOM $, consumable supply chains (wafers, photoresist, dopants, gases), realistic ceiling.